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WTC2301
P-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT -2.6 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130m@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
( Maximum Ratings(TA=25 Rating
Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @12V(T A ,V GS @12V(T A Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R JA TJ , T stg
Value
20 12 -2.6 -2.1 - 10 1.38 90 -55~+150
Unit
V
A
Total Po wer Dis sipation(T A=25C) Maximum Junction-ambient 3 Operating Junction and Storage Temperature Range
W C /W C
Device Marking
WTC2301=2301
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Electrical Characteristics (TA = 25
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS =0,I D =-250A Gate-Source Threshold Voltage VDS =VGS ,I D =-250 A Gate-Source L eakage C urrent VGS = 12V Drain- Sou rce Leakage Cu rrent(Tj=25C) VDS =-20V,V GS =0 Drain- Sou rce Leakage Cu rrent(Tj=70C) VDS =-16V,V GS =0 Drain-Source On-Resistance 2 VGS =-5.0V,I D=-2.8A VGS =-2.8V,I D=-2.0A Forward Transconductance VDS =-5.0 V, ID =-2.8A g fs R DS(o n) 4.4 130 190 m I DSS -10 V(BR)DSS VGS(Th) I GSS -20 -0.5 V 100 -1 A nA
S
Dynamic
Input Capacitance VGS =0V,VDS =-6V,f=1.0MHz Output Capacitance VGS =0V,VDS =-6V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-6V,f=1.0MHz C iss C oss C rss 295 170 65 pF
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Switching
Turn-on Delay Time 2 VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=6 Rise Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=6 Turn-off De lay Time VDS=-15V,V GS =-10V,I D=-1A,R D=15 ,R G=6 Fall Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=6 Total Gate Charge 2 VDS=-6.0V,VGS=-5.0V,I D=-2.8A Gate-Source C harge VDS=-6.0V,VGS=-5.0V,I D=-2.8A Gate-Drain C hange VDS=-6.0V,VGS=-5.0V,I D=-2.8A t d (on) 5.2 9.7 19 29 5.2 1.36 0.6 ns t d (off) 10 nC
tr
tf
Qg Q gs Q gd
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS =0V,IS=-1.6 A Tj=25 C
VSD
-
-
- 1.2 -1 - 10
V A A
Continuous Source Current(Body Diode) VD=VG =0V,VS =-1.2V Pulsed Source Current(Body Diode)
1
IS I SM
Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad.
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10
TA=25C
VGS= -5V VGS= -4V
10
TA=25C
8
VGS= -5V VGS= -4V VGS= -3V
-I D ,DRAIN CURRENT (A)
8
6
-I D ,Drain Current (A)
VGS= -3V
6
4
4
VG= -2V
2
VG= -2V
2
0
0
1
2
3
4
5
6
0
0
FIG.1 Typical Output Characteristics
800 1.8
-V DS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
-VDS ,Drain-to-source Voltage(V)
1
2
3
4
5
6
600
ID = -2A TA = 25C Normalized RDs(on)
1.6 1.4 1.2 1.0 0.8
ID = -2.8A VG = -5V
RDs(on) (m)
400
200
0
0
Fig.3 On-Resistance v.s. Gate Voltage
10.0 1.4
-VGS ,Gate-to-source Voltage(V)
2
4
6
8
10
0.6
-50
0
50
100
150
Fig.4 Normalized On-Resistance
Tj ,Junction Temperature(C)
Tj = 150C
1.0
-I S ( A )
-VGS(th)(V)
1.3
1.0
Tj = 25C
0.6
0
0
Fig.5 Forward Characteristics of Reverse Diode
-VDS ,Source-to-Drain Voltage(V)
0.5
0.9
0.2
-50
Fig.6 Gate Threshold Voltage v.s. Junction Temperature
Tj ,Junction Temperature(C)
0
50
100
150
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5
1000
f = 1.0MHz
-VGS , Gate to Source Voltage(V)
ID = -2.8A
4
VDS = -6V
Ciss
3
C(pF)
100
2
Coss
1
Crss
0
0
2
4
6
0
1
3
5
7
9
11
13
Fig 7. Gate Charge Characteristics
100
QG , Total Gate Charge(nC)
-VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5 0.2
10
Normalized Thermal Response(R ja)
0.1
0.1 0.05
PDM
-I D(A)
1
1ms 10ms
0.01
0.01
t T
0.1
TA = 25C Single Pulse
0.01
100ms Is DC
1 10 100
Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=270C / W
Single pulse
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
VDS , Drain-to-Source Voltage(V)
t, Pulse Width(s)
Fig 9. Maximum Safe Operation Area
VDS 90%
Fig 10. Effective Transient Thermal Impedance
VG QG QGS QGD
-5V
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
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SOT-23 Outline Dimension
SOT-23
A
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
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